BTS650PE3180A Ver la hoja de datos (PDF) - Infineon Technologies

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componentes Descripción

Fabricante

BTS650PE3180A

Smart Highside High Current Power Switch

Infineon Technologies 

Pin

1

2

3

4

5

6

7

Data Sheet BTS650P

Symbol

OUT

OUT

IN

Vbb

IS

OUT

OUT

Function

O Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with

each other especially in high current applications. 3)

O Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with

each other especially in high current applications. 3)

I Input; has an internal pull up; activates the power switch in case of short to

ground

+

Supply voltage; positive power supply voltage; tab and pin 4 are internally

shorted; in high current applications use the tab 4).

S Sense Output; Diagnostic feedback; provides a sense current proportional

to the load current; zero current on failure (see Truth Table on page 7)

O

Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with

each other especially in high current applications. 3)

O

Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with

each other especially in high current applications. 3)

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter

Symbol

Supply voltage (over voltage protection see page 4)

Supply voltage for short circuit protection,

Tj,start =-40 ...+150°C: (see diagram on page 10)

Load current (short circuit current, see page 5)

Load dump protection VLoadDump = VA + Vs, VA = 13.5 V

RI5) = 2 Ω, RL = 0.54 Ω, td = 200 ms,

IN, IS = open or grounded

Vbb

Vbb

IL

VLoad dump6)

Operating temperature range

Storage temperature range

Power dissipation (DC), TC ≤ 25 °C

Inductive load switch-off energy dissipation, single pulse

Vbb = 12V, Tj,start = 150°C, TC = 150°C const.,

IL = 20 A, ZL = 7.5 mH, 0 Ω, see diagrams on page 10

Electrostatic discharge capability (ESD)

Human Body Model acc. MIL-STD883D, method 3015.7 and ESD

assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ

Current through input pin (DC)

Current through current sense status pin (DC)

see internal circuit diagrams on page 8 and 9

Tj

Tstg

Ptot

EAS

VESD

IIN

IIS

Values Unit

42 V

34 V

self-limited A

75 V

-40 ...+150 °C

-55 ...+150

170 W

1.5

J

4 kV

+15 , -250 mA

+15 , -250

3) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability

and decrease the current sense accuracy

4) Otherwise add up to 0.7 mΩ (depending on used length of the pin) to the RON if the pin is used instead of the

tab.

5) RI = internal resistance of the load dump test pulse generator.

6) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.

Infineon Technologies AG

Page 2

2003-Oct-01

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