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VN410 Ver la hoja de datos (PDF) - STMicroelectronics

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componentes Descripción
Fabricante
VN410 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
VN410
ABSOLUTE MAXIMUM RATING
Symb ol
Parameter
Value
Unit
-Vbat Reverse Supply Voltage
-12
V
VBR( DSS) Drain-Source Breakdown Voltage
60
V
(Internally clamped)
Vp1 Breakdown Volt age in Pad : LEDEM
(Vbat < 15V)
(Vbat > 15V)
Vbat
V
15
V
Ip1
Breakdown Current in Pad : RT, CT , ROL
LDIR,RDIR
+/- 10
mA
- 10 / + 1 00
mA
IOut Maximum DC Load Current
15
A
Vgnd Voltage Drop Between ground connect ions (see note 1)
0.4
V
IR
Reverse Output Current
-15
A
Vesd
Ptot
Tj
Tstg
Electrostatic Discharge (R = 1.5 k, C = 100 pF)
Power Dissipation at Tc 25 oC
Junction Operating Temperature
Storage Temperature
2000
V
Internally Limited
W
Internally Limited
oC
-55 to 150
oC
Note 1: In case the voltage drops beetween ground connection exceed 0.4V, extenal resistors in series with EM pin and AL pin are needed
(if these pins are used) to prevent damages to the device. The value of these resistors is 100.
CONNECTION DIAGRAM
CURRENT AND VOLTAGE CONVENTIONS
2/11

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