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TE28F004B3TA100 Ver la hoja de datos (PDF) - Intel

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Fabricante
TE28F004B3TA100 Datasheet PDF : 58 Pages
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28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
AC Characteristics, Continued
Density
16 Mbit
Product
70 ns
#
Sym
Para-
meter
VCC
2.7 V–3.6 V
Min Max
R1 tAVAV Read Cycle Time
R2
tAVQV
Address to Output
Delay
70
70
R3
tELQV
CE# to Output
Delay(1)
70
R4
tGLQV
OE# to Output
Delay(1)
20
R5 tPHQV RP# to Output Delay
150
R6
tELQX
CE# to Output in
Low Z(2)
0
R7
tGLQX
OE# to Output in
Low Z(2)
0
R8
tEHQZ
CE# to Output in
High Z(2)
20
R9
tGHQZ
OE# to Output in
High Z(2)
20
Output Hold from
Address, CE#, or
R10 tOH OE# Change,
0
Whichever Occurs
First(2)
80 ns
2.7 V–3.6 V
Min Max
80
80
80
20
150
0
0
20
20
0
90 ns
3.0 V–3.6 V 2.7 V–3.6 V
Min Max Min Max
80
90
80
90
80
90
30
30
600
600
0
0
0
0
25
25
25
25
0
0
110 ns
3.0 V–3.6 V 2.7 V–3.6 V
Min Max Min Max
100
110
100
110
100
110
30
30
600
600
0
0
0
0
25
25
25
25
0
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES:
1. OE# may be delayed up to tELQV–tGLQV after the falling edge of CE# without impact on tELQV.
2. Sampled, but not 100% tested.
See Figure 7, “AC Waveform: Read Operations” on page 26.
See Figure 5, “Input/Output Reference Waveform” on page 22 for timing measurements and maximum
allowable input slew rate.
24
3UHOLPLQDU\

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