TE28F004B3TA100 Ver la hoja de datos (PDF) - Intel

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componentes Descripción

Fabricante

TE28F004B3TA100

3 Volt Advanced Boot Block Flash Memory

Intel 

4.2

4.3

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

Operating Conditions

Symbol

TA

VCC1

VCC2

VCC3

VCCQ1

VCCQ2

VCCQ3

VPP1

VPP2

VPP3

VPP4

Cycling

Parameter

Operating Temperature

VCC Supply Voltage

I/O Supply Voltage

Program and Erase Voltage

Block Erase Cycling

Notes

Min

Max

–40

+85

1, 2

2.7

3.6

2.7

2.85

2.7

3.3

1

2.7

3.6

1.65

2.5

1.8

2.5

1

2.7

3.6

2.7

2.85

2.7

3.3

3, 4

11.4

12.6

4

100,000

Units

°C

Volts

Volts

Volts

Cycles

NOTES:

1. VCC1, VCCQ1, and VPP3 must share the same supply when all three are between 2.7 V and 3.6 V.

2. VCCMax is 3.3 V on 0.25µm 32-Mbit devices.

3. During read operations or idle time, 5 V may be applied to VPP indefinitely. VPP must be at valid levels for

program and erase operations

4. Applying VPP = 11.4 V–12.6 V during a program/erase can only be done for a maximum of 1000 cycles on

the main blocks and 2500 cycles on the parameter blocks. VPP may be connected to 12 V for a total of

80 hours maximum. See Section 3.4 for details.

Capacitance

TA = 25 °C, f = 1 MHz

Sym

Parameter

Notes

Typ

CIN

Input Capacitance

1

6

COUT Output Capacitance

1

10

NOTE: Sampled, not 100% tested.

Max

8

12

Units

pF

pF

Conditions

VIN = 0 V

VOUT = 0 V

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19

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