TE28F400B3T110 Ver la hoja de datos (PDF) - Intel
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TE28F400B3T110 Datasheet PDF : 48 Pages
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SMART 3 ADVANCED BOOT BLOCK
E
1.2 Product Overview
Intel provides the most flexible voltage solution in
the flash industry, providing three discrete voltage
supply pins: VCC for read operation, VCCQ for output
swing, and VPP for program and erase operation. All
Smart 3 Advanced Boot Block flash memory
products provide program/erase capability at 2.7 V
or 12 V [for fast production programming] and read
with VCC at 2.7 V. Since many designs read from
the flash memory a large percentage of the time,
2.7 V VCC operation can provide substantial power
savings.
The Smart 3 Advanced Boot Block flash memory
products are available in either x8 or x16 packages
in the following densities: (see Ordering Information
for availability.)
• 4-Mbit (4,194,304-bit) flash memory organized
as 256 Kwords of 16 bits each or 512 Kbytes of
8-bits each
• 8-Mbit (8,388,608-bit) flash memory organized
as 512 Kwords of 16 bits each or 1024 Kbytes
of 8-bits each
• 16-Mbit (16,777,216-bit) flash memory
organized as 1024 Kwords of 16 bits each or
2048 Kbytes of 8-bits each
• 32-Mbit (33,554,432-bit) flash memory
organized as 2048 Kwords of 16 bits each or
4096 Kbytes of 8-bits each
The parameter blocks are located at either the top
(denoted by -T suffix) or the bottom (-B suffix) of the
address map in order to accommodate different
microprocessor protocols for kernel code location.
The upper two (or lower two) parameter blocks can
be locked to provide complete code security for
system initialization code. Locking and unlocking is
controlled by WP# (see Section 3.3 for details).
The Command User Interface (CUI) serves as the
interface between the microprocessor or
microcontroller and the internal operation of the
flash memory. The internal Write State Machine
(WSM) automatically executes the algorithms and
timings necessary for program and erase
operations, including verification, thereby un-
burdening the microprocessor or microcontroller.
The status register indicates the status of the WSM
by signifying block erase or word program
completion and status.
The Smart 3 Advanced Boot Block flash memory is
also designed with an Automatic Power Savings
(APS) feature which minimizes system current
drain, allowing for very low power designs. This
mode is entered following the completion of a read
cycle (approximately 300 ns later).
The RP# pin provides additional protection against
unwanted command writes that may occur during
system reset and power-up/down sequences due to
invalid system bus conditions (see Section 3.6).
Section 3.0 gives detailed explanation of the
different modes of operation. Complete current and
voltage specifications can be found in the DC
Characteristics section. Refer to AC Characteristics
for read, program and erase performance
specifications.
2.0 PRODUCT DESCRIPTION
This section explains device pin description and
package pinouts.
2.1 Package Pinouts
The Smart 3 Advanced Boot Block flash memory is
available in 40-lead TSOP (x8, Figure 1), 48-lead
TSOP (x16, Figure 2) and 48-ball µBGA packages
(x8 and x16, Figure 3 and Figure 4 respectively). In
all figures, pin changes necessary for density
upgrades have been circled.
6
PRELIMINARY
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