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TE28F400B3T110

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

Intel 

E

SMART 3 ADVANCED BOOT BLOCK

1.0 INTRODUCTION

This datasheet contains the specifications for the

Advanced Boot Block flash memory family, which is

optimized for low power, portable systems. This

family of products features 1.65 V–2.5 V or 2.7 V–

3.6 V I/Os and a low VCC/VPP operating range of

2.7 V–3.6 V for read, program, and erase

operations. In addition this family is capable of fast

programming at 12 V. Throughout this document,

the term “2.7 V” refers to the full voltage range

2.7 V–3.6 V (except where noted otherwise) and

“VPP = 12 V” refers to 12 V ±5%. Section 1.0 and

2.0 provide an overview of the flash memory family

including applications, pinouts and pin descriptions.

Section 3.0 describes the memory organization and

operation for these products. Sections 4.0 and 5.0

contain the operating specifications. Finally,

Sections 6.0 and 7.0 provide ordering and other

reference information.

1.1 Smart 3 Advanced Boot Block

Flash Memory Enhancements

The Smart 3 Advanced Boot Block flash memory

features

• Enhanced blocking for easy segmentation of

code and data or additional design flexibility

• Program Suspend to Read command

• VCCQ input of 1.65 V–2.5 V on all I/Os. See

Figures 1 through 4 for pinout diagrams and

VCCQ location

• Maximum program and erase time specification

for improved data storage.

Feature

Table 1. Smart 3 Advanced Boot Block Feature Summary

28F008B3, 28F016B3, 28F400B3(2), 28F800B3,

28F032B3(1)

28F160B3, 28F320B3

Reference

VCC Read Voltage

2.7 V– 3.6 V

Section 4.2, 4.4

VCCQ I/O Voltage

1.65 V–2.5 V or 2.7 V– 3.6 V

Section 4.2, 4.4

VPP Program/Erase Voltage

2.7 V– 3.6 V or 11.4 V– 12.6 V

Section 4.2, 4.4

Bus Width

8-bit

16 bit

Table 3

Speed

80 ns, 90 ns, 100 ns, 110 ns

Section 4.5

Memory Arrangement

1024 Kbit x 8 (8 Mbit),

2048 Kbit x 8 (16 Mbit),

4096 Kbit x 8 (32 Mbit)

256 Kbit x 16 (4 Mbit),

512 Kbit x 16 (8 Mbit),

1024 Kbit x 16 (16 Mbit)

2048 Kbit x 16 (32 Mbit)

Section 2.2

Blocking (top or bottom)

Eight 8-Kbyte parameter blocks and

Seven 64-Kbyte blocks (4-Mbit) or

Fifteen 64-Kbyte blocks (8-Mbit) or

Thirty-one 64-Kbyte main blocks (16-Mbit)

Sixty-three 64-Kbyte main blocks (32-Mbit)

Section 2.2

Appendix D

Locking

WP# locks/unlocks parameter blocks

All other blocks protected using VPP

Section 3.3

Table 8

Operating Temperature

Extended: –40 °C to +85 °C

Section 4.2, 4.4

Program/Erase Cycling

100,000 cycles

Section 4.2, 4.4

Packages

40-lead TSOP(1), 48-Ball 48-Lead TSOP, 48-Ball Figure 3, Figure 4

µBGA* CSP(2)

µBGA CSP(2)

NOTES:

1. 4-Mbit and 32-Mbit density not available in 40-lead TSOP.

2. 4-Mbit density not available in µBGA* CSP.

PRELIMINARY

5

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