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BC556

Small Signal Transistor (PNP)

General Semiconductor 

BC556 THRU BC559

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

Unit

h-Parameters

at –VCE = 5 V, –IC = 2 mA, f = 1 kHz

Current Gain

Current Gain Group A hfe

B

hfe

C

hfe

Input Impedance

Current Gain Group A hie

B

hie

C

hie

Output Admittance Current Gain Group A hoe

B

hoe

C

hoe

Reverse Voltage Transfer Ratio

Current Gain Group A hre

B

hre

C

hre

–

220

–

–

–

330

–

–

–

600

–

–

1.6

2.7

4.5

kΩ

3.2

4.5

8.5

kΩ

6

8.7

15

kΩ

–

18

30

µS

–

30

60

µS

–

60

110

µS

–

1.5 · 10–4 –

–

–

2 · 10–4

–

–

–

3 · 10–4

–

–

DC Current Gain

at –VCE = 5 V, –IC = 10 µA

Current Gain Group A hFE

B

hFE

C

hFE

at –VCE = 5 V, –IC = 2 mA

Current Gain Group A hFE

B

hFE

C

hFE

at –VCE = 5 V, –IC = 100 mA

Current Gain Group A hFE

B

hFE

C

hFE

–

90

–

–

–

150

–

–

–

270

–

–

110

180

220

–

–

200

290

450

–

420

500

800

–

–

120

–

–

–

200

–

–

–

400

–

Thermal Resistance Junction to Ambient Air

RthJA

–

–

2501)

K/W

Collector Saturation Voltage

at –IC = 10 mA, –IB = 0.5 mA

at –IC = 100 mA, –IB = 5 mA

–VCEsat

–

–VCEsat

–

80

300

mV

250

650

mV

Base Saturation Voltage

at –IC = 10 mA, –IB = 0.5 mA

at –IC = 100 mA, –IB = 5 mA

–VBEsat

–

700

–

mV

–VBEsat

–

900

–

mV

Base-Emitter Voltage

at –VCE = 5 V, –IC = 2 mA

at –VCE = 5 V, –IC = 10 mA

–VBE

600

660

750

mV

–VBE

–

–

800

mV

Collector-Emitter Cutoff Current

at –VCE = 80 V

BC556 –ICES

–

at –VCE = 50 V

BC557 –ICES

–

at –VCE = 30 V

BC558 –ICES

–

at –VCE = 80 V, Tj = 125 °C

BC556 –ICES

–

at –VCE = 50 V, Tj = 125 °C

BC557 –ICES

–

at –VCE = 30 V, Tj = 125 °C BC558, BC559 –ICES

–

0.2

15

nA

0.2

15

nA

0.2

15

nA

–

4

µA

–

4

µA

–

4

µA

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.

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