2N5322 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
2N5322 Datasheet PDF : 4 Pages
| |||
2N5322/2N5323
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
17.5
175
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = -80 V
VCB = -60 V
for 2N5322
for 2N5323
IEBO
Collector Cut-off
Current (IC = 0)
VEB = -5 V
VEB = -4 V
for 2N5322
for 2N5323
V(BR)CEV
Collector-Emitter
Breakdown Voltage
(VBE = 1.5V)
IC = -100 µA
for 2N5322
for 2N5323
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = -10 mA
for 2N5322
for 2N5323
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = -100 µA
for 2N5322
for 2N5323
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = -500 mA
for 2N5322
for 2N5323
IB = -50 mA
VBE∗
Base-Emitter Voltage
IC = -500 mA
for 2N5322
for 2N5323
VCE = -4 V
hFE∗ DC Current Gain
for 2N5322
IC = -500 mA
IC = -1 A
for 2N5323
IC = -500 mA
VCE = -4 V
VCE = -2 V
VCE = -4 V
fT
Transition Frequency IC = -50 mA VCE = -4 V f = 10 MHz
ton
Turn-on Time
IC = -500 mA VCC = -30 V
IB1 = -50 mA
toff
Turn-off Time
IC = -500 mA VCC = -30 V
IB1 = -IB2 = -50 mA
∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1 %
Min.
-100
-75
-75
-50
-6
-5
30
10
40
50
Typ.
-0.1
-0.5
Max.
-0.5
-5
-0.7
-1.2
-1.1
-1.4
130
250
100
1000
Unit
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
MHz
ns
ns
2/4
Share Link: 