MMBT2222A Ver la hoja de datos (PDF) - STMicroelectronics
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MMBT2222A Datasheet PDF : 5 Pages
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MMBT2222A
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient
• Device mounted on a PCB area of 1 cm2 .
Max
357.1
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEX
IBEX
ICBO
Collector Cut-off
Current (VBE = -3 V)
Base Cut-off Current
(VBE = -3 V)
Collector Cut-off
Current (IE = 0)
VCE = 60 V
VCE = 60 V
VCB = 75 V
VCB = 75 V
Tj = 150 oC
IEBO
Emitter Cut-off Current
(IC = 0)
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VEB = 3 V
IC = 10 mA
IC = 10 µA
IE = 10 µA
IC = 150 mA
IC = 500 mA
IB = 15 mA
IB = 50 mA
VBE(sat)∗ Collector-Base
Saturation Voltage
IC = 150 mA
IC = 500 mA
IB = 15 mA
IB = 50 mA
hFE∗ DC Current Gain
IC = 0.1 mA
IC = 1 mA
IC = 10 mA
IC = 150 mA
IC = 150 mA
IC = 500 mA
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 1 V
VCE = 10 V
fT
Transition Frequency IC = 20 mA VCE = 20V f = 100MHz
CCBO
Collector-Base
Capacitance
IE = 0 VCB = 10 V f = 1 MHz
CEBO
Emitter-Base
Capacitance
IC = 0 VEB = 0.5 V f = 1MHz
NF Noise Figure
hie∗ Input Impedance
IC = 0.1 mA VCE = 10 V f = 1 KHz
∆f = 200 Hz RG = 1 KΩ
VCE = 10 V IC = 1 mA f = 1 KHz
VCE = 10 V IC = 10 mA f = 1 KHz
hre∗ Reverse Voltage Ratio VCE = 10 V IC = 1 mA f = 1 KHz
VCE = 10 V IC = 10 mA f = 1 KHz
Min.
40
75
6
0.6
35
50
75
100
50
40
2
0.25
Typ.
270
4
20
4
Max.
10
20
10
10
15
0.3
1
1.2
2
300
8
25
8
1.25
8
4
Unit
nA
nA
nA
µA
nA
V
V
V
V
V
V
V
MHz
pF
pF
dB
KΩ
KΩ
10-4
10-4
hfe∗ Small Signal Current VCE = 10 V IC = 1 mA f = 1 KHz
50
Gain
VCE = 10 V IC = 10 mA f = 1 KHz
75
hoe∗ Output Admittance
VCE = 10 V IC = 1 mA f = 1 KHz
5
VCE = 10 V IC = 10 mA f = 1 KHz
25
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
300
375
35
µS
200 µS
2/5
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