DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

S202S11F Ver la hoja de datos (PDF) - Sharp Electronics

Número de pieza
componentes Descripción
Fabricante
S202S11F Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Symbol Rating Unit
Input
Forward current
Reverse voltage
RMS ON-state current
Peak one cycle surge current
IF
VR
IT(rms)
Isurge
50 *3 mA
6
V
8 *3
A
80 *4
A
Repetitive
S102S11
400
peak OFF-state voltage S202S11 VDRM
600
V
Output
Non-Repetitive
S102S11
400
peak OFF-state voltage S202S11 VDSM
600
V
Critical rate of rise of ON-state current dIT/dt
50
A/µs
Operating frequency
f
45 to 65 Hz
*1Isolation voltage
Viso(rms) 4.0
kV
Operating temperature
Topr 20 to +80 ˚C
Storage temperature
*2Soldering temperature
Tstg 30 to +100 ˚C
Tsol
260
˚C
*1 40 to 60%RH, AC for 1minute, f=60Hz
*2 For 10s
*3 Refer to Fig.1, Fig.2
*4 f=50Hz sine wave, Tj=25˚C start
S102S11 Series
S202S11 Series
Soldering area
Electro-optical Characteristics
Parameter
Symbol
Conditions
Forward voltage
Input
Reverse current
VF
IF=20mA
IR
VR=3V
Output
ON-state voltage
VT(rms)
S102S11
Minimum Operating current S202S11 IOP(rms)
S102S11
Open circuit leak current S202S11 Ileak(rms)
IT(rms)=2A, Resistance load, IF=20mA
VOUT(rms)=120V
VOUT(rms)=240V
VOUT(rms)=120V
VOUT(rms)=240V
Critical rate of rise of OFF-state voltage dV/dt
VD=2/3•VDRM
Critical rate of rise of OFF-state voltage at commutaion (dV/dt)c Tj=125˚C, VD=2/3•VDRM, dIT/dt=4.0A/ms
Minimum trigger current
IFT
VD=12V, RL=30
Isolation resistance
RISO
DC500V, 40 to 60%RH
Transfer Turn-on time
charac-
teristics
Turn-off time
S102S11
VD(rms)=100V, AC60Hz
S202S11
ton
IT(rms)=2A, Resistance load, IF=20mA
VD(rms)=200V, AC60Hz
IT(rms)=2A, Resistance load, IF=20mA
S102S11
VD(rms)=100V, AC60Hz
S202S11
toff
IT(rms)=2A, Resistance load, IF=20mA
VD(rms)=200V, AC60Hz
IT(rms)=2A, Resistance load, IF=20mA
Thermal resistance
Rth(j-c)
Rth(j-a)
Between junction and case
Between junction and ambient
MIN.
30
5
1010
TYP.
1.2
4.0
40
(Ta=25˚C)
MAX. Unit
1.4 V
100 µA
1.5 V
50
mA
50
5
mA
10
V/µs
V/µs
8 mA
1
ms
1
9.3
ms
9.3
˚C/W
Sheet No.: D4-A02801EN
4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]