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74V1T79CTR Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
74V1T79CTR Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
74V1T79
DC SPECIFICATIONS
Test Condition
Value
Symbol
Parameter
VIH
VIL
VOH
VOL
II
ICC
+ICC
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
Low Level Output
Voltage
Input Leakage
Current
Quiescent Supply
Current
Additional Worst
Case Supply
Current
VCC
(V)
4.5 to
5.5
4.5 to
5.5
4.5
4.5
4.5
4.5
0 to
5.5
IO=-50 µA
IO=-8 mA
IO=50 µA
IO=8 mA
VI = 5.5V or GND
5.5 VI = VCC or GND
One Input at 3.4V,
5.5 other input at VCC
or GND
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
2
2
2
V
0.8
0.8
0.8 V
4.4 4.5
4.4
4.4
V
3.94
3.8
3.7
0.0 0.1
0.1
0.1 V
0.36
0.44
0.55
± 0.1
± 1.0
± 1.0 µA
1
10
20 µA
1.35
1.5
1.5 mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns)
Test Condition
Value
Symbol
Parameter
VCC CL
(V) (pF)
tPLH tPHL Propagation Delay 5.0 (*) 15
Time CK to Q
5.0 (*) 50
tW CK Pulse Width, 5.0 (*)
HIGH or LOW
ts Setup Time D to 5.0 (*)
CK, HIGH or LOW
th Hold Time D to CK, 5.0 (*)
HIGH or LOW
fMAX Maximum Clock
Frequency
5.0 (*) 50
(*) Voltage range is 5.0V ± 0.5V
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
3.9 5.5 1.0 6.5 1.0 7.5 ns
4.5 6.5 1.0 7.5 1.0 8.5
3.0
3.0
3.0
ns
2.0
2.0
2.0
ns
1.0
1.0
1.0
ns
120 180
120
120
MHz
CAPACITIVE CHARACTERISTICS
Test Condition
Value
Symbol
Parameter
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
CIN Input Capacitance
4 10
10
10 pF
CPD Power Dissipation
Capacitance
8
pF
(note 1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC
3/9

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