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L6246 Ver la hoja de datos (PDF) - STMicroelectronics

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componentes Descripción
Fabricante
L6246
ST-Microelectronics
STMicroelectronics ST-Microelectronics
L6246 Datasheet PDF : 12 Pages
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L6246
PIN FUNCTIONS (continued)
Pin
Name
Description
26
+12Setpt
+12V Monitor Set Point and filtering
27
Vbemf
Input BEMF from spindle motor for parking circuit.
28
Rpark
Resistor for setting the park voltage.
29
-W_Gate
Write Gate Input.
30
+VCM park External input for parking. High will activate the park procedure.
31 -Spindle_start Spindle Start input.
32
+Enable
Input. logic low will disable only the IC.
33
N.C.
Not Connected.
34
Cpgnd
Charge Pump Ground.
35
Gnd
Ground.
36
Out+
Power Amplifier Output.
37
Vcc
+12V Power Supply.
38
C1
Charge Pump Oscillator Output.
39
C2
Input for external Charge Pump Capacitor.
40
Vcp
Output for Charge Pump Storage Capacitor.
41
Vcc
+12V Power Supply.
42
Out-
Power Amplifier Output.
43
Gnd
Ground.
44
Gate Drive Gate Drive for External Isolation N-MOSFETS.
ELECTRICAL CHARACTERISTICS (Tj = 25°C, Vdd = 5V, Vcc = 12V; unless otherwise specified.)
Symbol
Parameter
Test Condition
Vcc
Analog/Power supply voltage
range
Vdd
Digital supply voltage range
Idd
Digital supply quiescent current Output ENABLED
Idd
Digital supply quiescent current Output DISABLED
Icc
Power supply quiescent current Output ENABLED
Icc
Power supply quiescent current Output DISABLED
THERMAL SHUT DOWN DATA
Th_SD
Shut down Temperature
Th _SD_H
Th_Warn
Shut down hysteresys
Pre Shut down alarm
Pre Shut down alarm hysteresys
EXTERNAL N-MOSFET GATE DRIVER
Vll
Low level voltage
Vhl
High level voltage
Isink
Current sinking capability
Isource Current source capability
POWER ON RESET AND GATE SPECIFICATION
Vdd_und_th Digital undervoltage threshold
Vcc_und_th
POR_to
POR_delay
Vdd_POR_T_R
Power undervoltage threshold
POR timeout
Time delay for POR Active
Power supply POR thereshold
Resistance
Cpor = 1µF
Min.
10.8
Typ.
12
Max.
13.2
Unit
V
4.5
5
5.5
V
5
mA
5
mA
20
mA
10
mA
135 160
°C
25
°C
115 140
°C
15
°C
500 mV
Vcc+4
V
4
mA
0.5
mA
3.8
4.1 4.45
V
8.5 9.25 10.0
V
375
500
625
ms
1
µs
10
K
4/12

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