BU4S66 Ver la hoja de datos (PDF) - ROHM Semiconductor

Número de pieza

componentes Descripción

Fabricante

BU4S66

Single analog switch

ROHM Semiconductor 

Standard ICs

•Absolute maximum ratings (Ta = 25°C)

Parameter

Symbol

Limits

Unit

Power supply voltage

VDD

VSS – 0.3 ~ VSS + 18

V

Power dissipation

Pd

170

mW

Input current

IIN

± 10

mA

Operating temperature

Topr

– 40 ~ + 85

°C

Storage temperature

Tstg

– 55 ~ + 150

°C

Input voltage

VIN

VSS – 0.3 ~ VDD + 0.3

V

∗1 These values indicate the range limits of the voltage that can be applied to each pin without

destroying it. Operation is not guaranteed at these values.

∗2 Reduced by 1.7mW for each increase in Ta of 1°C over 25°C.

•Recommended operating conditions (Ta = 25°C, VSS = 0V)

Parameter

Symbol Min. Typ. Max.

Unit

Power supply voltage

VDD

3

—

16

V

Input voltage

VIN

0

—

VDD

V

BU4S66

•Electrical characteristics

DC characteristics (unless otherwise noted, VSS = 0V, Ta = 25°C)

Parameter

Symbol Min.

3.5

Control input high level

voltage

VIH

7.0

11.0

—

Control input low level

voltage

VIL

—

—

—

ON resistance

RON

—

—

OFF-channel

leakage current

—

Ioff

—

—

Static current dissipation IDD

—

—

Input capacitance

CC

—

(control input)

Input capacitance

(switch input)

CS

—

Typ. Max.

—

—

—

—

—

—

—

1.5

—

3.0

—

4.0

290

950

120

250

85

160

—

0.3

— – 0.3

—

1.0

—

2.0

—

4.0

8

—

10

—

Unit VDD (V)

Conditions

V

5

V

10

Current between input

and output = 10µA

V

15

V

5

V

10

Current between input

and output = 10µA

V

15

Ω

5

Ω

10

0 Ϲ VIN Ϲ VDD

RL = 10kΩ

Ω

15

15 VIN = 15V, VOUT = 0V

µA

15 VIN = 0V, VOUT = 15V

5

µA

10 VIN = VDD or GND

15

pF

— f = 1MHz

pF

— f = 1MHz

Measurement

circuit

Fig.1

Fig.2

Fig.3

—

—

—

2

Share Link: