RA251(2011) Ver la hoja de datos (PDF) - Diotec Semiconductor Germany

Número de pieza

componentes Descripción

Fabricante

RA251
(Rev.:2011)

Silicon-Rectifiers – Button Diodes

Diotec Semiconductor Germany  

RA2505 ... RA2510

Characteristics

Forward Voltage – Durchlass-Spannung

Leakage current

Sperrstrom

Tj = 25°C IF = 80 A

VF

Tj = 25°C VR = VRRM

IR

Tj = 100°C VR = VRRM

IR

Thermal resistance junction to case (terminal)

RthC

Wärmewiderstand Sperrschicht – Gehäuse (Anschluss)

Kennwerte

< 1.1 V

< 5 µA

< 250 µA

< 1.0 K/W

120

[%]

100

80

60

40

20

IFAV

0

0 TC 50

100

150 [°C]

Rated forward current versus case temperature

Zul. Richtstrom in Abh. von der Gehäusetemp.

103

[A]

102

10

Tj = 25°C

1

IF

10-1

375a-(25a-1,1v)

0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8

Forward characteristics (typical values)

Durchlasskennlinien (typische Werte)

103

[A]

102

îF

10

1

(375a-25a)

10

10 2

[n] 103

Peak forward surge current versus number of cycles at 50 Hz

Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz

2

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