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NTE480

Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz

NTE Electronics 

NTE480

Silicon NPN Transistor

RF Power Output for Broadband Amp,

PO = 40W @ 512MHz

Description:

The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband

applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resis-

tors to withstand infinite VSWR under operating conditions.

Features:

D Designed for UHF Commercial Equipment

D 38W with Greater than 5.8dB Gain

D Withstands 20:1 VSWR Min., All Phase Angles

D Tuned Q Technology

D Diffused Emitter Resistors

Absolute Maximum Ratings: (TC = +25°C unless othrwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V

Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A

Total Device Dissipation (At +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117W

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5°C/W

Electrical Characteristic: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Static

Collector–Emitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0, Note 1

V(BR)CES IC = 15mA, VBE = 0, Note 1

Emitter–Base Breakdown Voltage

V(BR)EBO IE = 5mA, iC = 0

Collector Cutoff Current

DC Current Gain

ICES

hFE

VCE = 12.5V, VBE = 0

VCE = 5V, IC = 1A

Min Typ Max Unit

16 –

36 –

4

–

–

–

20 –

–

V

–

V

–

V

5 mA

–

Note 1. Pulsed through 25mH indicator.

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