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NTE394

Silicon NPN Transistor Power Amp, High Voltage Switch

NTE Electronics 

NTE394

Silicon NPN Transistor

Power Amp, High Voltage Switch

Description:

The NTE394 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use

in high voltage, fast switching applications.

Absolute Maximum Ratings:

Collector–Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V

Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

Emitter–Base Voltage (IC = 0), VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A

Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A

Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA

Total Power Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25°C/W

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector–Emitter Cutoff Current

ICEO VCE = 300V, IB = 0

Emitter–Base Cutoff Current

Collector–Emitter Sustaining Voltage

ICES

IEBO

VCEO(sus)

VCE = 500V, VEB = 0

VEB = 5V, IC = 0

IC = 30mA, IB = 0, Note 1

Collector–Emitter Saturation Voltage

VCE(sat) IC = 3A, IB = 0.6A, Note 1

Base–Emitter ON Voltage

VBE(on) IC = 3A, VCE = 10V, Note 1

DC Current Gain

hFE IC = 0.3A, VCE = 10V

IC = 3A, VCE = 10V

Min Typ Max Unit

–

–

1 mA

–

–

1 mA

–

–

1 mA

400 –

–

V

–

– 1.5 V

–

– 1.5 V

30 150 –

10 –

–

Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%.

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