NTE81 Ver la hoja de datos (PDF) - NTE Electronics
Número de pieza
componentes Descripción
Fabricante
NTE81 Datasheet PDF : 3 Pages
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Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON Characteristics (Note 2)
V(BR)CEO IC = 10mA, IB = 0, Note 2
V(BR)CBO IC = 10µA, IE = 0
V(BR)EBO IE = 10µA, IC = 0
ICEV VCE = 50V, VBE(off) = 3V
IBL VCE = 50V, VEB(off) = 3V
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Small–Signal Characteristics
hFE
VCE(sat)
VBE(sat)
IC = 0.1mA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 1.0V
IC = 150mA, VCE = 10V
IC = 300mA, VCE = 10V
IC = 150mA, IB = 15mA
IC = 300mA, IB = 30mA
IC = 150mA, IB = 15mA
IC = 300mA, IB = 30mA
Current Gain–Bandwidth Product
fT IC = 20mA, VCE = 20V,
f = 100MHz
Output Capacitance
Input Capacitance
Switching Characteristics
Cobo
Cibo
VCB = 10V, IE = 0, f = 100kHz
VEB = 0.5V, IC = 0, f = 100kHz
Delay Time
Rise Time
Storage Time
Fall Time
td
VCC = 30V, IC = 150mA,
tr
VBE(off) = 0.5V, IB1 = 15mA
ts
VCC = 30V, IC = 150mA,
tf
IB1 = IB2 = 15mA
Min Typ Max Unit
30 –
60 –
5–
15 –
30 –
–V
–V
–V
– nA
– nA
20 50 –
25 55 –
35 65 –
20 65 –
40 30 120
25 75 –
– 0.2 0.4 V
– 0.35 1.2 V
0.6 0.95 1.3 V
– – 2.0 V
200 250 – MHz
– 3.5 8.0 pF
– 15 20 pF
– – 15 µs
– – 30 µs
– – 250 µs
– – 60 µs
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
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