MJE521 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

MJE521

SILICON NPN TRANSISTOR

STMicroelectronics 

MJE521

THERMAL DATA

Rthj-amb Thermal Resistance Junction-ambient

Max

3.12

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol

Parameter

Test Conditions

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 40 V

IEBO

Emitter Cut-off Current VEB = 4 V

(IC = 0)

VCEO(sus)∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 0.1 A

hFE DC Current Gain

IC = 1 A

∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 1.5%

VCE = 1 V

Min. Typ.

40

40

Max.

100

100

Unit

µA

µA

V

2/4

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