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NTE466

Silicon N–Channel JFET Transistor Chopper, High Speed Switch

NTE Electronics 

NTE466

Silicon N–Channel JFET Transistor

Chopper, High Speed Switch

Absolute Maximum Ratings:

Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40V

Forward Gate Current, IG(f) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

OFF Characteristics

Gate–Source Breakdown Voltage

Gate Reverse Current

Gate–Source Cutoff Voltage

Drain Cutoff Current

ON Characteristics

V(BR)GSS IG = 1A, VDS = 0

–40 –

–

V

IGSS VGS = –20V, VDS = 0

–

– 0.25 nA

VGS = –20V, VDS = 0, TA = +150°C

–

– 0.5 µA

VGS(off) VDS = 15V, ID = 0.5nA

–4 – –10 V

ID(off) VDS = 15V, VGS = –10V

–

– 0.25 nA

VDS = 15V, VGS = –10V, TA = +150°C –

– 0.5 µA

Zero–Gate–Voltage Drain Current

Drain–Source ON–Voltage

Small–Signal Characteristics

Drain–Source “ON” Resistance

Input Capacitance

Reverse Transfer Capacitance

Switching Characteristics (Note 2)

IDSS VDS = 15V, VGS = 0, Note 1

VDS(on) ID = 20mA, VGS = 0

rDS(on)

Ciss

Crss

VGS = 0, ID = 0, f = 1kHz

VDS = 0, VGS = –10V, f = 1MHz

VDS = 0, VGS = –10V, f = 1MHz

50 –

– mA

–

– 0.75 V

–

– 25 Ω

–

– 18 pF

–

– 0.8 pF

Turn–On Delay Time

Rise Time

Turn–Off Time

td(on)

tr

toff

VDD = 10V, ID(on) = 20mA,

VGS(on) = 0, VGS(off) = –10V

–

–

6 ns

–

–

3 ns

–

– 25 ns

Note 1. Pulse Test: Pulse Width = 100ms, Duty Cycle ≤ 10%.

Note 2. The ID(on) values are nominal; exact values vary slightly with transistor parameters.

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