RC10S10G Ver la hoja de datos (PDF) - Shanghai Sunrise Electronics

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RC10S10G

SILICON GPP CELL RECTIFIER

Shanghai Sunrise Electronics 

SHANGHAI SUNRISE ELECTRONICS CO., LTD.

RC10S01G THRU RC10S10G

SILICON GPP

CELL RECTIFIER

VOLTAGE: 100 TO 1000V CURRENT: 10A

TECHNICAL

SPECIFICATION

FEATURES

• Glass passivated junction chip

• High surge capability

• Solderable electrode surfaces Ideal for hybrids

MECHANICAL DATA

• Polarity: Bottom or upper electrode denotes

cathode according to the notice

in package

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Single-phase, half-wave, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load, derate

current by 20%)

RATINGS

RC10S RC10S RC10S RC10S RC10S RC10S

SYMBOL

UNITS

01G 02G 04G 06G 08G 10G

Maximum Repetitive Peak Reverse Voltage VRRM 100 200 400 600 800 1000 V

Maximum RMS Voltage

VRMS

70

140 280 420 560 700 V

Maximum DC Blocking Voltage

VDC 100 200 400 600 800 1000 V

Maximum Average Forward Rectified Current

(Ta=55oC)

(Note 2)

IF(AV)

10

A

Peak Forward Surge Current (8.3ms single

half sine-wave superimposed on rated load)

IFSM

400

A

Maximum Instantaneous Forward Voltage

VF

(at rated forward current)

Maximum DC Reverse Current

(at rated DC blocking voltage)

Ta=25oC

Ta=150oC

IR

Typical Junction Capacitance

(Note 1) CJ

Typical Thermal Resistance

(Note 3) Rθ(ja)

Storage and Operation Junction Temperature TSTG,TJ

Note:

1. Measured at 1 MHz and applied voltage of 4.0Vdc

2. When mounted to heat sink from body.

3. Thermal resistance from junction to ambient.

1.0

10

300

300

1

-50 to +150

V

µA

µA

pF

oC/W

oC

http://www.sse-diode.com

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