BUT18F Ver la hoja de datos (PDF) - Philips Electronics
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componentes Descripción
Fabricante
BUT18F Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUT18F; BUT18AF
handbook1, h.5alfpage
VBEsat
(V)
1
MGB880
(1)
(2)
(3)
102
handbook, halfpage
hFE
10
MBC097
VCE = 5 V
1V
0.5
10−2
Tj = 25 °C.
(1) IC = 4 A.
(2) IC = 2 A.
(3) IC = 1 A.
10−1
1
IB (A) 10
Fig.8 Base-emitter saturation voltage as a
function of base current.
1
10−2
10−1
1
10 IC (A) 102
VCE = 5 V; Tj = 25 °C.
Fig.9 DC current gain; typical values.
handbook, halfpage
VIM
0
tp
T
VCC
RL
RB
D.U.T.
MGE244
VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01.
The values of RB and RL are selected in accordance with ICon and
IBon requirements.
Fig.10 Test circuit resistive load.
handbook, halfpage
90%
IB
10%
tr ≤30 ns
90%
MBB731
IB on
t
IB off
IC on
IC
10%
ton
tf
t
ts
tr ≤ 20 ns.
Fig.11 Switching times waveforms with
resistive load.
1999 Jun 11
7
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