BRY62 Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza

componentes Descripción

Fabricante

BRY62

Silicon controlled switch

Philips Electronics 

Philips Semiconductors

Silicon controlled switch

Product specification

BRY62

handbook, halfpa+g1e2 V

1 kΩ

2.7 kΩ

C

mercury

wetted

contact

RKG-K

+50 V

16 kΩ

VAK

MBB684

Fig.8 Test circuit for turn-off time.

handVbAooKk, halfpage

(V)

12

tq

0

MBB686

C = Copt

C < Copt

time

– 12

Fig.9 Capacitance increased until C = Copt

dashed curve disappears.

1.2

handbook, halfpage

hFE

X

0.8

0.4

MBB584

VAG-K = 5 V

2V

handbook1, .h8alfpage

h FE

X

1.4

1.0

MBB583

0

0

50

IAG (mA) 100

X is the value of hFE at IC = 10 mA; VAG-K = 2 V; Tamb = 25 °C.

Fig.10 Normalized DC current gain as a function of

anode gate current.

0.6

0

50

100

150

Tamb ( o C)

X is the value of hFE at IAG = 10 mA; VAG-K = 2 V; Tamb = 25 °C.

Fig.11 Normalized DC current gain as a function of

ambient temperature.

1999 Apr 22

6

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