DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TN1215-1000B Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
TN1215-1000B
ST-Microelectronics
STMicroelectronics ST-Microelectronics
TN1215-1000B Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
TN12, TS12 and TYNx12 Series
Figure 3: Average and D.C. on-state current
versus ambient temperature (device mounted
on FR4 with recommended pad layout) (DPAK)
IT(AV)(A)
3.0
2.5
D.C.
2.0
D2PAK
1.5
α = 180°
1.0
DPAK
0.5
Tamb(°C)
0.0
0
25
50
75
100
125
Figure 4: Relative variation of thermal
impedance junction to case versus pulse
duration
K=[Zth(j-c)/Rth(j-c)]
1.0
0.5
0.2
0.1
1E-3
tp(s)
1E-2
1E-1
1E+0
Figure 5: Relative variation of thermal
impedance junction to ambient versus pulse
duration (recommended pad layout, FR4 PC
board for DPAK)
Figure 6: Relative variation of gate trigger
current and holding current versus junction
temperature for TS8 series
K=[Zth(j-a)/Rth(j-a)]
1.00
0.10
D2PAK
DPAK
TO-220AB / IPAK
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2
5E+2
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.0
1.8
1.6
IGT
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Tj(°C)
0.0
-40 -20
0
20
40
60
IH & IL
RGK = 1k
80 100 120 140
Figure 7: Relative variation of gate trigger
current and holding current versus junction
temperature for TN8 & TYN08 series
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.4
2.2
2.0
1.8
IGT
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Tj(°C)
0.0
-40 -20
0
20
40
60
IH & IL
80 100 120 140
Figure 8: Relative variation of holding current
versus gate-cathode resistance (typical
values) for TS8 series
IH[RGK] / IH[RGK=1k]
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E-2
RGK(k)
1E-1
1E+0
Tj = 25°C
1E+1
4/11

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]