TN1215-1000B Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
TN1215-1000B Datasheet PDF : 11 Pages
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TN12, TS12 and TYNx12 Series
■ STANDARD
Symbol
Test Conditions
IGT
VGT
VGD
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V RL = 33 Ω
VD = VDRM RL = 3.3 kΩ
Tj = 125°C
IT = 500 mA Gate open
IG = 1.2 IGT
VD = 67 % VDRM Gate open Tj =125°C
ITM = 24 A tp = 380 µs
Tj = 25°C
Threshold voltage
Tj = 125°C
Dynamic resistance
Tj = 125°C
VDRM = VRRM
Tj = 25°C
Tj = 125°C
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
TN1215
TYN
B / H G x12T x12
2
0.5 2
15
5 15
1.3
0.2
40 30 15 30
80 60 30 60
200
40 200
1.6
0.85
30
5
2
Unit
mA
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
Table 6: Thermal resistance
Symbol
Rth(j-c) Junction to case (DC)
Rth(j-a) Junction to ambient (DC)
S = Copper surface under tab.
Parameter
S = 0.5 cm²
S = 1 cm²
DPAK
D2PAK
IPAK
TO-220AB
Value Unit
1.3 °C/W
70
45
°C/W
100
60
Figure 1: Maximum average power dissipation
versus average on-state current
P(W)
12
11
α = 180°
10
9
8
7
6
5
4
3
360°
2
1
IT(AV)(A)
α
0
0
1
2
3
4
5
6
7
8
9
Figure 2: Average and D.C. on-state current
versus case temperature
IT(AV)(A)
14
12
10
8
6
4
2
0
0
25
D.C.
α = 180°
Tcase(°C)
50
75
100
125
3/11
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