SST45VF010 Ver la hoja de datos (PDF) - Silicon Storage Technology
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Fabricante
SST45VF010 Datasheet PDF : 16 Pages
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512 Kbit / 1 Mbit / 2 Mbit Serial Flash
SST45VF512 / SST45VF010 / SST45VF020
Advance Information
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute maximum Stress
Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device
at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied.
Exposure to absolute maximum stress rating conditions may affect device reliability.)
1
Temperature Under Bias ................................................................................................................. -55°C to +125°C 2
Storage Temperature ...................................................................................................................... -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential ............................................................................ -0.5V to VDD + 0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential ........................................................ -1.0V to VDD + 1.0V
3
Package Power Dissipation Capability (Ta = 25°C) ........................................................................................... 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) ............................................................................... 240°C
4
Output Short Circuit Current1 ................................................................................................................................................................... 50 mA
5
OPERATING RANGE
AC CONDITIONS OF TEST
Range
Ambient Temp
VDD
Input Rise/Fall Time ......... 5 ns
6
Commercial 0 °C to +70 °C
2.7-3.6V
Output Load ..................... CL = 30 pF
See Figures 2 and 3
7
TABLE 5: DC OPERATING CHARACTERISTICS VDD = 2.7-3.6V
8
Limits
Symbol Parameter
Min Max Units Test Conditions
9
Power Supply Current
f = 10 MHz
IDD Read
20 mA CE# = VIL, VDD = VDD Max.
Program and Erase
30 mA CE# = VIL, VDD = VDD Max.
10
ISB Standby Current
15
µA CE# = VIHC, VDD = VDD Max.
ILI Input Leakage Current
ILO Output Leakage Current
1
µA VIN =GND to VDD, VDD = VDD Max.
1
µA VOUT =GND to VDD, VDD = VDD Max.
11
IIL Input Low Current(2)
360 µA WP#, RESET# = GND
VIL Input Low Voltage
0.8
V VDD = VDD Min.
12
VIH Input High Voltage
0.7 VDD
V VDD = VDD Max.
VIHC Input High Voltage (CMOS) VDD-0.3
V VDD = VDD Max.
VOL Output Low Voltage
0.2
V IOL = 100 µA, VDD = VDD Min.
13
VOH Output High Voltage
VDD-0.2
V IOH = -100 µA, VDD = VDD Min.
Note: 1. Outputs shorted for no more than one second. No more than one output shorted at a time.
2. This parameter only applies to WP# and RESET# pins.
514 PGM T5.2
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© 2000 Silicon Storage Technology, Inc.
5
S71178
514-1 10/00
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