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AS1700-NPN Ver la hoja de datos (PDF) - Astec Semiconductor => Silicon Link

Número de pieza
componentes Descripción
Fabricante
AS1700-NPN
Astec
Astec Semiconductor => Silicon Link Astec
AS1700-NPN Datasheet PDF : 20 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Semicustom Bipolar Array
AS17xx
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Continuous Power Dissipated at 25° C
PD
Single Transistor
300
mW
Total Package
1400
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
–65 to 150
°C
Lead Temperature, Soldering 10 Seconds TL
300
°C
Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Electrical Characteristics
All parameters measured at 25° C.
Parameter
AS1700-NPN: Minimum NPN
Collector-to-Emitter Breakdown Voltage
Collector-to-Base Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Voltage
Static Forward Current-Transfer Ratio
Early Voltage
Transistor Matching (measuring IC)
AS1700-PWR: Large NPN (20-emitter)
Collector-to-Emitter Breakdown Voltage
Collector-to-Base Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Voltage
Static Forward Current-Transfer Ratio
Early Voltage
Symbol
LVCEO
BVCBO
BVEBO
ICEO
VCE SAT
VBE
β (hFE)
VA
LVCEO
BVCBO
BVEBO
ICEO
VCE SAT
VBE
β (hFE)
VA
Test Condition
IC = 1 mA
IC = 100 µA
IE = 10 µA
VCE = 18 V
IB = 10 µA, IC = 100 µA
VCE = 3 V, IC = 100 µA
VCE = 3 V, IC = 100 µA
IC = 200 µA
IC = 1 mA
IC = 100 µA
IE = 10 µA
VCE = 18 V
IB = 200 µA, IC = 2 mA
VCE = 3 V, IC = 200 µA
VCE = 3 V, IC = 2 mA
Min
Typ
Max
Unit
20
35
V
50
60
V
5
8
V
0
2
100
nA
0
95
200
mV
650
680
700
mV
80
125
500
–150
V
–10
<1
10
%
20
35
V
50
58
V
5
7.6
V
0
2
100
nA
0
20
200
mV
650
680
700
mV
80
125
500
–150
V
ASTEC Semiconductor
121

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