PRLL5817 Ver la hoja de datos (PDF) - Philips Electronics

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PRLL5817

Schottky barrier diodes

Philips Electronics 

Philips Semiconductors

Schottky barrier diodes

Product specification

PRLL5817; PRLL5818; PRLL5819

200

Tj

(oC)

100

MBE635

VRWM

δ = 0.2

VR

δ = 0.5

0.1

PR

(W)

VRWM

VR

δ = 0.5 δ = 0.2

0.05

MBE640

0

0

10

VR (V)

20

Fig.6

PRLL5817. Maximum permissible junction

temperature as a function of reverse voltage;

device mounted; refer to SOD87 standard

mounting conditions.

0

0

10

VR (V)

20

Fig.7

PRLL5817. Reverse power dissipation as a

function of reverse voltage (max. values);

device mounted; refer to SOD87 standard

mounting conditions.

200

Tj

(oC)

100

MBE636

VRWM

δ = 0.2

VR δ = 0.5

0.1

PR

(W)

0.05

VRWM

VR δ = 0.5

δ = 0.2

MBE638

0

0

20

VR (V)

40

0

0

20

VR (V)

40

Fig.8

PRLL5818. Maximum permissible junction

temperature as a function of reverse voltage;

device mounted; refer to SOD87 standard

mounting conditions.

Fig.9

PRLL5818. Reverse power dissipation as a

function of reverse voltage (max. values);

device mounted; refer to SOD87 standard

mounting conditions.

1999 Apr 22

7

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