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CY7C1018CV33-12VC(2006) Ver la hoja de datos (PDF) - Cypress Semiconductor

Número de pieza
componentes Descripción
Fabricante
CY7C1018CV33-12VC
(Rev.:2006)
Cypress
Cypress Semiconductor Cypress
CY7C1018CV33-12VC Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
CY7C1018CV33
Selection Guide
-10
-12
-15
Unit
Maximum Access Time
10
12
15
ns
Maximum Operating Current Comm’l
90
85
80
mA
Ind’l
85
mA
Maximum Standby Current
5
5
5
mA
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on VCC Relative to GND[2] ... –0.5V to + 4.6V
DC Voltage Applied to Outputs[6]
in High-Z State .......................................–0.5V to VCC + 0.5V
DC Input Voltage[2].................................–0.5V to VCC + 0.5V
Electrical Characteristics Over the Operating Range
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... > 200 mA
Operating Range
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
VCC
3.3V ± 10%
3.3V ± 10%
–10
–12
–15
Parameter Description
Test Conditions
Min. Max. Min. Max. Min. Max. Unit
VOH
Output HIGH Voltage VCC = Min.,
IOH = – 4.0 mA
VOL
Output LOW Voltage VCC = Min.,
IOL = 8.0 mA
VIH
Input HIGH Voltage
VIL
Input LOW Voltage[2]
IIX
Input Leakage
GND < VI < VCC
Current
2.4
2.4
2.4
V
0.4
0.4
0.4
V
2.0 VCC + 0.3 2.0 VCC + 0.3 2.0 VCC + 0.3 V
–0.3
0.8
–0.3
0.8
–0.3
0.8
V
–1
+1
–1
+1
–1
+1
µA
IOZ
Output Leakage
GND < VI < VCC,
Current
Output Disabled
–1
+1
–1
+1
–1
+1
µA
ICC
VCC Operating
VCC = Max.,
Comm’l
90
85
80
mA
Supply Current
IOUT = 0 mA,
f = fMAX = 1/tRC
Ind’l
85
mA
ISB1
Automatic CE
Max. VCC, CE > VIH Comm’l
15
15
15
mA
Power-down Current VIN > VIH or
—TTL Inputs
VIN < VIL, f = fMAX
Ind’l
15
mA
ISB2
Automatic CE
Max. VCC,
Comm’l
5
5
5
mA
Power-down Current CE > VCC – 0.3V,
—CMOS Inputs
VIN > VCC – 0.3V,
Ind’l
5
mA
or VIN < 0.3V, f = 0
Capacitance[3]
Parameter
Description
Test Conditions
Max.
Unit
CIN
COUT
Input Capacitance
Output Capacitance
TA = 25°C, f = 1 MHz,
VCC = 3.3V
Notes:
2. VIL (min.) = –2.0V for pulse durations of less than 20 ns.
3. Tested initially and after any design or process changes that may affect these parameters.
8
pF
8
pF
Document #: 38-05131 Rev. *D
Page 2 of 7
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