VTV1250 Ver la hoja de datos (PDF) - GHz Technology
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VTV1250 Datasheet PDF : 3 Pages
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VTV1250
125 Watts, 28Volts, Class AB
VHF Television - Band III
GENERAL DESCRIPTION
The VTV 1250 is a COMMON EMITTER transistor capable of providing 125
Watts Peak, Class AB, RF Output Power over the band 175 - 225 MHz. The
transistor includes double input and output prematching for full broadband
capability. Gold Metalization and Diffused Ballasting are used to provide high
reliability and supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
250Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage
BVceo Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
65 Volts
28 Volts
4.0 Volts
12 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 150oC
+ 200oC
CASE OUTLINE
55JT, STYLE 2
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
η1
VSWR1
Power Out - Pk Sync
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 175-225 MHz
Vcc = 28 Volts
Icq = 0.3Amps
Rated Cond.
F = 225 MHz
MIN
125
60
TYP
8.0
12
65
MAX UNITS
Watts
12.5 Watts
dB
%
3:1
LVceo2
Collector to Emitter Breakdown Ic = 50 mA
33
Volts
BVces2
Collector to Base Breakdown
Ic = 100 mA
65
Volts
BVebo2 Emitter to Base Breakdown
Ie = 5 mA
4.0
Volts
hFE2
Current Gain
Vce = 5 V, 1mA
20
Cob2
Output Capacitance
Vcb = 28 V, F = 1 MHz
65
pF
θjc
Thermal Resistance
Tc = 25oC
0.7
oC/W
Note 1: Rated Conditions
Note 2: Per side
Issue October 1997
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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