PJE8050CX Ver la hoja de datos (PDF) - Promax Johnton

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PJE8050CX

NPN Epitaxial Silicon Transistors

Promax Johnton 

PJE8050

NPN Epitaxial Silicon Transistors

OUTPUT AMPLIFIER OF PORTABLE

RADIO IN CLAS S B PUS H-PULL OPERATION

• Complement to PJE8550

• Collector Current Ic=1.5A

• Collector Dissipation Pc=2W(Tc=25°C)

TO-92

SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C)

Rating

Collector-base Voltage

Collector-Emitter Voltage

Emitter-base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

IC

IC

PC

TJ

T stg

Rating

120

60

6

0.5

1

0.75

150

-55~150

Unit

V

V

V

A

A

W

°C

°C

ELECTRICAL CHARACTERISTICS(Ta=25°C)

P in:1.Emitter

2. Colletor

3. Base

P in:1.Base

2.Emitter

3.Colletor

ORDERING INFORMATION

Device

PJE8050CT

PJE8050CX

Operating Temperature

-20℃～+85℃

Package

T O-92

SOT -23

Characteristic

Symbol

Test Condition

Min Typ Max

Collector Cutoff Current

Emitter Cutoff Current

*DC Current Gain

**Base Emitter On Voltage

*Collector Emitter Saturation Voltage

*Base Emitter Saturation Voltage

Output Capacitance

Current Gain Bandwidth Product

ICBO

IEBO

hFE1

hFE2

VBE (on)

VCE (sat)

VBE (sat)

COb

fT

VCB=60V,IE=0

VEB=6V,IC=0

VCE=2V,IC=50mA

VCE=2V,IC=0.5A

VCE=2V,IC=20mA

IC=400mA,IB=40mA

IC=500mA,IB=50mA

VCB=10V,IE=0,f=1MHz

VCE=2V,IC=100mA

100

100

135

400

81

600 640

700

0.15 0.3

0.9

1.2

19

100 160

Turn On Time

Storage Time

Fall Time

ton

VCC=10V,IC=100mA

0.07

ts

IB1= -IB2=10mA

0.95

tf

VBE(off)= -2~-3V

0.07

hFE(1) CLASSIFICATION

Unit

nA

nA

mV

V

V

pF

MHz

µs

µs

µs

Classification

hFE(1)

B

85-160

C

120-220

D

160-300

E

380-600

1-3

2002/01.rev.A

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