GLT6400M16LL-120TC Ver la hoja de datos (PDF) - G-Link Technology
Número de pieza
componentes Descripción
Fabricante
GLT6400M16LL-120TC Datasheet PDF : 13 Pages
| |||
G-LINK
Write Cycle (11)( Vcc=2.3 to 2.7V, TA = -25°C to 85°C )
GLT6400M16
Ultra Low Power 256k x 16 CMOS SRAM
May 2001(Rev. 2.0)
Parameter
Write Cycle Time
Chip Enable to Write End
Address Setup to Write End
Address Setup Time
Write Pulse Width
Write Recovery Time
Data Valid to Write End
Data Hold Time
Write Enable to Output in High-Z
Output Active from Write End
BLE , BHE Setup to Write End
85
Symbol
Min Max
tWC
85
tCW
70
tAW
70
tAS
0
tWP
60
tWR
0
tDW
35
tDH
0
tWHZ
35
tOW
5
tBW
70
120
Min Max
120
100
100
0
80
0
50
0
35
5
100
Unit Note
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Timing Waveform of Write Cycle 1 (Address Controlled)(2~6,8)
tWC
Address
CE1
tAW
tWR
tCW
tBW
UB / LB
tWP
WE
tAS
High-Z
DIN
tDW
tDH
DOUT
tOW
High-Z
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-7-
G-Link Technology Corporation, Taiwan
6F No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
Share Link: 