BSM35GD120D2 Ver la hoja de datos (PDF) - Infineon Technologies
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BSM35GD120D2 Datasheet PDF : 9 Pages
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BSM 35 GD 120 D2
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 39 Ω
10 3
Typ. switching time
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, IC = 35 A
10 3
tdoff
t
ns
10 2
tdoff
t
ns
tdon
tr
tr
10 2
tdon
tf
tf
10 1
0
10 20 30 40 50 60
A 80
IC
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 39 Ω
20
mWs
Eon
E
16
14
12
10
8
Eoff
6
4
2
0
0 10 20 30 40 50 60 A 80
IC
10 1
0
20 40 60 80 100 120 140 Ω 180
RG
Typ. switching losses
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600V, VGE = ± 15 V, IC = 35 A
20
mWs
E
16
14
Eon
12
10
8
6
Eoff
4
2
0
0 20 40 60 80 100 120 140 Ω 180
RG
Semiconductor Group
7
Feb-10-1997
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