C67070-A2300-A70 Ver la hoja de datos (PDF) - Infineon Technologies
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C67070-A2300-A70 Datasheet PDF : 9 Pages
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BSM 200 GB 120 DN2
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 4.7 Ω
10 4
ns
t
10 3
tdoff
tdon
10 2
tr
tf
Typ. switching time
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, IC = 200 A
10 4
ns
t
10 3
tdoff
tdon
tr
10 2
tf
10 1
0
100
200
300
A
500
IC
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 4.7 Ω
100
mWs
Eon
E
80
70
60
50
Eoff
40
30
20
10
0
0
100
200
300
A
500
IC
10 1
0
10
20
30
40
Ω
60
RG
Typ. switching losses
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600V, VGE = ± 15 V, IC = 200 A
100
Eon
mWs
E
80
70
60
50
Eoff
40
30
20
10
0
0
10
20
30
40
Ω
60
RG
Semiconductor Group
7
Mar-29-1996
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