BSM200GB120DN2 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BSM200GB120DN2 Datasheet PDF : 9 Pages
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BSM 200 GB 120 DN2
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
1500
W
Ptot 1200
1100
1000
900
800
700
600
500
400
300
200
100
0
0
20 40 60 80 100 120 °C 160
TC
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
300
A
IC 240
220
200
180
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 3
tp = 49.0µs
A
IC
10 2
100 µs
10 1
1 ms
10 ms
10 0
10 0
10 1
10 2
DC
10
3
V
VCE
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 0
K/W
10 -1
ZthJC
10 -2
10 -3
10 -4
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -5
10 -5
10 -4
10 -3
10 -2
10 -1
tp
s 10 0
Semiconductor Group
4
Mar-29-1996
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