C67076-A2504-A17 Ver la hoja de datos (PDF) - Infineon Technologies

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Fabricante

C67076-A2504-A17

IGBT Power Module

Infineon Technologies 

BSM 15 GD 120 D2

Typ. gate charge

VGE = ƒ(QGate)

parameter: IC puls = 15 A

20

V

VGE 16

14

600 V

800 V

12

10

8

6

4

2

0

0 10 20 30 40 50 60 70 80 nC 100

QGate

Reverse biased safe operating area

ICpuls = f(VCE) , Tj = 150°C

parameter: VGE = 15 V

2.5

Typ. capacitances

C = f (VCE)

parameter: VGE = 0 V, f = 1 MHz

10 1

nF

C

10 0

Ciss

10 -1

Coss

Crss

10 -2

0

5 10 15 20 25 30 V 40

VCE

Short circuit safe operating area

ICsc = f(VCE) , Tj = 150°C

parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH

12

ICpuls/IC

1.5

1.0

0.5

ICsc/IC

8

6

4

2

0.0

0

200 400 600 800 1000 1200 V 1600

VCE

0

0 200 400 600 800 1000 1200 V 1600

VCE

Semiconductor Group

6

Feb-10-1997

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