C67076-A2504-A17 Ver la hoja de datos (PDF) - Infineon Technologies
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C67076-A2504-A17 Datasheet PDF : 9 Pages
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IGBT Power Module
BSM 15 GD 120 D2
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
BSM 15 GD 120 D2
VCE IC
1200V 25A
Package
SIXPACK 1
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 80 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Power dissipation per IGBT
TC = 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
VCE
VCGR
VGE
IC
ICpuls
Ptot
Tj
Tstg
RthJC
RthJCD
Vis
-
-
-
-
Ordering Code
C67076-A2504-A17
Values
Unit
1200
V
1200
± 20
A
25
15
50
30
W
145
+ 150
°C
-55 ... + 150
≤ 0.86
K/W
≤ 1.5
2500
Vac
16
mm
11
F
sec
55 / 150 / 56
Semiconductor Group
1
Feb-10-1997
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