C67076-A2112-A70 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
C67076-A2112-A70 Datasheet PDF : 9 Pages
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BSM150GB120DN2E3166
Typ. gate charge
VGE = ƒ(QGate)
parameter: IC puls = 150 A
20
V
VGE 16
14
600 V
12
Typ. capacitances
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 2
nF
C
800 V
10 1
Ciss
10
8
10 0
Coss
6
Crss
4
2
0
0
200 400 600 800 nC 1100
QGate
10 -1
0
5 10 15 20 25 30 V 40
VCE
Reverse biased safe operating area
ICpuls = f(VCE) , Tj = 150°C
parameter: VGE = 15 V
Short circuit safe operating area
ICsc = f(VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 20 nH
2.5
12
ICpuls/IC
1.5
1.0
0.5
ICsc/IC
8
6
4
2
0.0
0
200 400 600 800 1000 1200 V 1600
VCE
0
0 200 400 600 800 1000 1200 V 1600
VCE
Semiconductor Group
6
Aug-02-1996
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