BSM150GB120DN2E3166 Ver la hoja de datos (PDF) - Infineon Technologies
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BSM150GB120DN2E3166 Datasheet PDF : 9 Pages
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BSM150GB120DN2E3166
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
VCC = 600 V, VGE = 15 V, IC = 150 A
RGon = 5.6 Ω
-
200
Rise time
tr
VCC = 600 V, VGE = 15 V, IC = 150 A
RGon = 5.6 Ω
-
100
Turn-off delay time
td(off)
VCC = 600 V, VGE = -15 V, IC = 150 A
RGoff = 5.6 Ω
-
600
Fall time
tf
VCC = 600 V, VGE = -15 V, IC = 150 A
RGoff = 5.6 Ω
-
70
ns
400
200
800
100
Free-Wheel Diode
Diode forward voltage
VF
V
IF = 150 A, VGE = 0 V, Tj = 25 °C
1.4
1.8
2.3
IF = 150 A, VGE = 0 V, Tj = 125 °C
-
1.35 -
Reverse recovery time
trr
µs
IF = 150 A, VR = -600 V, VGE = 0 V
diF/dt = -1500 A/µs, Tj = 125 °C
-
0.5
-
Reverse recovery charge
Qrr
µC
IF = 150 A, VR = -600 V, VGE = 0 V
diF/dt = -1500 A/µs
Tj = 25 °C
-
12
-
Tj = 125 °C
-
36
-
Semiconductor Group
3
Aug-02-1996
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