C67076-A2112-A70 Ver la hoja de datos (PDF) - Infineon Technologies
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C67076-A2112-A70 Datasheet PDF : 9 Pages
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BSM150GB120DN2E3166
IGBT Power Module
Preliminary data
• Half-bridge
• Including fast free-wheeling diodes
• Enlarged diode area
• Package with insulated metal base plate
Type
VCE IC
Package
BSM150GB120DN2E3166 1200V 210A HALF-BRIDGE 2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 80 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Power dissipation per IGBT
TC = 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
VCE
VCGR
VGE
IC
ICpuls
Ptot
Tj
Tstg
RthJC
RthJCD
Vis
-
-
-
-
Ordering Code
C67076-A2112-A70
Values
Unit
1200
V
1200
± 20
A
210
150
420
300
W
1250
+ 150
°C
-55 ... + 150
≤ 0.1
K/W
≤ 0.125
2500
Vac
20
mm
11
F
-
55 / 150 / 56
Semiconductor Group
1
Aug-02-1996
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