C67076-A2106-A70 Ver la hoja de datos (PDF) - Infineon Technologies
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componentes Descripción
Fabricante
C67076-A2106-A70 Datasheet PDF : 9 Pages
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BSM 75 GB 120 DN2
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15V, RG = 15 Ω
10 4
ns
t
10 3
tdoff
10 2
tr
tf
tdon
Typ. switching time
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600V, IC = 75 A
10 4
ns
t
10 3
tdoff
tr
tdon
10 2
tf
10 1
0
20 40 60 80 100 120 140 A 180
IC
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 15 Ω
40
Eon
mWs
E
30
25
10 1
0
10 20 30 40 50 60 Ω 80
RG
Typ. switching losses
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, IC = 75 A
30
mWs
Eon
E
20
20
15
Eoff
10
5
0
0 20 40 60 80 100 120 140 A 180
IC
15
Eoff
10
5
0
0 10 20 30 40 50 60 Ω 80
RG
Semiconductor Group
7
Mar-29-1996
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