BSM75GD120DN2 Ver la hoja de datos (PDF) - Infineon Technologies
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BSM75GD120DN2 Datasheet PDF : 9 Pages
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BSM 75 GD 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
VCC = 600 V, VGE = 15 V, IC = 75 A
RGon = 15 Ω
-
30
Rise time
tr
VCC = 600 V, VGE = 15 V, IC = 75 A
RGon = 15 Ω
-
70
Turn-off delay time
td(off)
VCC = 600 V, VGE = -15 V, IC = 75 A
RGoff = 15 Ω
-
450
Fall time
tf
VCC = 600 V, VGE = -15 V, IC = 75 A
RGoff = 15 Ω
-
70
ns
60
140
600
100
Free-Wheel Diode
Diode forward voltage
IF = 75 A, VGE = 0 V, Tj = 25 °C
IF = 75 A, VGE = 0 V, Tj = 125 °C
Reverse recovery time
IF = 75 A, VR = -600 V, VGE = 0 V
diF/dt = -900 A/µs, Tj = 125 °C
Reverse recovery charge
IF = 75 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs, Tj = 25 °C
diF/dt = -800 A/µs, Tj = 125 °C
diF/dt = -900 A/µs, Tj = 25 °C
VF
-
-
trr
-
Qrr
-
-
V
2.3
2.8
1.8
-
µs
0.125 -
µC
3.2
-
10
-
Semiconductor Group
3
Mar-27-1996
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