BSM75GD120DN2 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BSM75GD120DN2

IGBT Power Module

Infineon Technologies 

BSM 75 GD 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Gate threshold voltage

VGE = VCE, IC = 2 mA

Collector-emitter saturation voltage

VGE = 15 V, IC = 75 A, Tj = 25 °C

VGE = 15 V, IC = 75 A, Tj = 125 °C

Zero gate voltage collector current

VCE = 1200 V, VGE = 0 V, Tj = 25 °C

VCE = 1200 V, VGE = 0 V, Tj = 125 °C

Gate-emitter leakage current

VGE = 20 V, VCE = 0 V

VGE(th)

VCE(sat)

-

-

ICES

-

-

IGES

-

V

2.5

3

3.1

3.7

mA

1

1.5

4

-

nA

-

320

AC Characteristics

Transconductance

gfs

S

VCE = 20 V, IC = 75 A

31

-

-

Input capacitance

Ciss

nF

VCE = 25 V, VGE = 0 V, f = 1 MHz

-

5.1

-

Output capacitance

Coss

VCE = 25 V, VGE = 0 V, f = 1 MHz

-

0.72 -

Reverse transfer capacitance

Crss

VCE = 25 V, VGE = 0 V, f = 1 MHz

-

0.38 -

Semiconductor Group

2

Mar-27-1996

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