BSM75GD120DN2 Ver la hoja de datos (PDF) - Infineon Technologies
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BSM75GD120DN2 Datasheet PDF : 9 Pages
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BSM 75 GD 120 DN2
IGBT Power Module
Preliminary data
• Solderable Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
BSM 75 GD 120 DN2
VCE IC
Package
1200V 103A ECONOPACK 3
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 80 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Power dissipation per IGBT
TC = 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
VCE
VCGR
VGE
IC
ICpuls
Ptot
Tj
Tstg
RthJC
RthJCD
Vis
-
-
-
-
Ordering Code
C67070-A2516-A67
Values
Unit
1200
V
1200
± 20
A
103
75
206
150
W
520
+ 150
°C
-55 ... + 150
≤ 0.235
K/W
≤ 0.55
2500
Vac
16
mm
11
F
-
55 / 150 / 56
Semiconductor Group
1
Mar-27-1996
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