RPR-359F Ver la hoja de datos (PDF) - ROHM Semiconductor
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RPR-359F Datasheet PDF : 3 Pages
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Sensors
RPR-359F
Reflective photosensor (photoreflector)
RPR-359F
The RPR-359F is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a
high-sensitivity, silicon planar phototransistor. A plastic lens is used for high sensitivity. In addition, since it is molded in
plastic with a visible light filter, there is almost no effect from stay light.
!Application
Copiers, Compact disc players
!Features
1) A plastic lens is used for high sensitivity.
2) A built-in visible light filter minimizes the influence of
stray light.
3) Low collector-emitter saturation voltage.
4) Lightweight and compact.
!External dimensions (Units : mm)
8.7±0.1
0.5 3.6 0.5 3.6 0.5
1
3
2
4
Notes :
1. Unspecified tolerance shall be ±0.2.
2. Dimension in parenthesis are show
for reference.
1 Cathode
2 Anode
3 Collector
4 Emitter
0.35
(4.2)
(2.5)
0.6±0.1
4− 0.5±0.1
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Input
(LED)
Forward current
Reverse voltage
Power dissipation
IF
50
mA
VR
5
V
PD
80
mW
Output
(Photo-
transistor)
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
VCEO
VECO
IC
PC
Topr
30
V
4.5
V
30
mA
100
mW
−25∼+85
˚C
Storage temperature
Tstg
−40∼+100
˚C
1/3
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