HS-1100RH Ver la hoja de datos (PDF) - Intersil
Número de pieza
componentes Descripción
Fabricante
HS-1100RH Datasheet PDF : 11 Pages
| |||
Die Characteristics
DIE DIMENSIONS:
63 mils x 44 mils x 19 mils ±1 mil
(1600µm x 1130µm x 483µm ±25.4µm)
INTERFACE MATERIALS:
Glassivation:
Type: Nitride
Thickness: 4kÅ ±0.5kÅ
Top Metallization:
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8kÅ ±0.4kÅ
Type: Metal 2: AICu (2%)
Thickness: Metal 2: 16kÅ ±0.8kÅ
Metallization Mask Layout
V-
HS-1100RH
Substrate:
UHF-1, Bonded Wafer, DI
ASSEMBLY RELATED INFORMATION:
Substrate Potential (Powered Up):
Floating
ADDITIONAL INFORMATION:
Worst Case Current Density:
1.6 x 105 A/cm2
Transistor Count:
52
HS-1100RH
+IN
-IN
VL
BAL
OUT
BAL
VH
V+
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
11
Share Link: 