MAQ9264C70CB Ver la hoja de datos (PDF) - Dynex Semiconductor

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MAQ9264C70CB

Radiation hard 8192 x 8 bit static RAM

Dynex Semiconductor 

Replaces June 1999 version, DS3692-6.0

MAM9A2926644

Radiation Hard 8192x8 Bit Static RAM

DS3692-7.0 January 2000

The MA9264 64k Static RAM is configured as 8192x8 bits and

manufactured using CMOS-SOS high performance, radiation hard,

1.5µm technology.

The design uses a 6 transistor cell and has full static operation with

no clock or timing strobe required. Address input buffers are deselected

when chip select is in the HIGH state.

See Application Note “Overview of the Dynex Semiconductor

Radiation Hard 1.5µm CMOS/SOS SRAM Range”.

Operation Mode CS CE OE WE I/O Power

Read

L H L H D OUT

Write

L H X L D IN ISB1

Output Disable L H H H High Z

Standby

H X X X High Z

X L XX

X

ISB2

FEATURES

s 1.5µm CMOS-SOS Technology

s Latch-up Free

s Fast Access Time 70ns Typical

s Total Dose 106 Rad(Si)

s Transient Upset >1011 Rad(Si)/sec

s SEU 4.3 x 10-11 Errors/bitday

s Single 5V Supply

s Three State Output

s Low Standby Current 100µA Typical

s -55°C to +125°C Operation

s All Inputs and Outputs Fully TTL or CMOS

Compatible

s Fully Static Operation

Figure 1: Truth Table

A12

A

D

R

A9

D

O

A8

R

W

E

A4

S

S

D

A3

E

B

C

A6

U

O

F

D

A5

F

E

E

R

A7

R

CS

CE

WE

OE

A10 A0 A1 A2 A11

Figure 2: Block Diagram

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