MA5114 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

MA5114

Radiation hard 1024x4 Bit Static RAM

Dynex Semiconductor 

MA5114

TAVAVW

ADDRESS

TAVWL

TAVWH

TWLWH (2)

TWHAV (3)

WE

DATA OUT

HIGH

IMPEDANCE

(4)

TELWL

(7)

TWLQZ

DATA IN

TAXQX

TWLQH

(5)

(6)

TDVWH

DATA VALID

TWHDX

TELWH

CS

1. WE must be high during all address transitions.

2. A write occurs during the overlap (TWLWH) of a low CS and a low WE.

3. TWHAV is measured from either CS or WE going high, whichever is the earlier, to the end of the write cycle.

4. If the CS low transition occurs simultaneously with, or after, the WE low transition, the output remains in

the high impedance state.

5. DATA OUT is in the active state, so DATA IN must not be in opposing state.

6. DATA OUT is the write data of the current cycle, if selected.

7. DATA OUT is the read data of the next address, if selected.

8. TELWL must be met to prevent memory corruption.

Figure 12: Write Cycle

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