GP400LSS12 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
GP400LSS12 Datasheet PDF : 10 Pages
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GP400LSS12
40
Conditions:
VCE = 600V,
35 VGE = 15V,
Rg = 4.7Ω
30
25
Tcase = 125˚C
20
Tcase = 25˚C
15
10
5
0
0
100
200
300
400
Collector current, IC (A)
Fig. 7 Typical diode turn-off energy vs collector current
1000
900
800
td(off)
700
td(on)
600
500
400
300
Conditions:
Tcase = 125˚C,
VCE = 600V
VGE = 15V
Rg = 3.3Ω
200
100
0
0
tf
tr
50 100 150 200 250 300 350 400
Collector currrent, IC - (A)
Fig.8 Typical switching characteristics
800
700
600
Tj = 25˚C
Tj = 125˚C
500
400
300
200
100
0
0
0.5
1
1.5
2
2.5
3
3.5
Forward voltage, VF - (V)
Fig. 9 Diode typical forward characteristics
1000
900
800
700
600
500
400
300
200 Tcase = 125˚C
Vge = ±15V
100 Rg = 4.7Ω*
*Recommended minimum value
0
0
200
400
600
800 1000
Collector-emitter voltage, Vce - (V)
1200
Fig. 10 Reverse bias safe operating area
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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