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GP400LSS12 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza
componentes Descripción
Fabricante
GP400LSS12
Dynex
Dynex Semiconductor Dynex
GP400LSS12 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
GP400LSS12
TYPICAL CHARACTERISTICS
800
Common emitter
Tcase = 25˚C
700
Vge = 20/15/12/10V
600
500
400
300
200
100
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
800
Common emitter
Tcase = 125˚C
700
Vge = 20/15/12/10V
600
500
400
300
200
100
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
80
Conditions:
Tcase = 125˚C,
70 VCE = 600V,
A
VGE = ±15V
B
60
C
50
40
30
20
10
0
50
A : Rg = 6.2
B : Rg = 4.7
C : Rg = 3.3
100 150 200 250 300 350 400 450
Collector current, IC - (A)
Fig. 5 Typical turn-on energy vs collector current
90
Conditions:
80
Tcase = 125˚C,
VCE = 600V,
VGE = ±15V
70
AB
C
60
50
40
30
20
A : Rg = 6.2Ω
10
B : Rg = 4.7Ω
C : Rg = 3.3Ω
0
0 50 100 150 200 250 300 350 400
Collector current, IC - (A)
Fig. 6 Typical turn-off energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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