GP2400ESM12 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
GP2400ESM12 Datasheet PDF : 12 Pages
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GP2400ESM12
2400
2000
1600
Tj = 25˚C
Tj = 125˚C
1200
800
400
0
0
0.5
1
1.5
2
2.5
3
Forward voltage, VF - (V)
Fig.13 Diode typical forward characteristics
10000
3500
3000
2500
2000
1500
1000
500
0
0
Conditions:
Tcase = 125'C
Vge = 15
Rg = 3.3 ohms
200 400 600 800 1000
Collector emitter voltage, Vce - (V)
1200 1400
Fig.14 Reverse bias safe operating area
100
1000
IC max (DC)
100
10
10
tp = 50µs
tp = 100µs
tp = 1ms
1
Diode
Transistor
1
0.1
1
10
100
1000
10000
0.001
0.01
0.1
1
10
Collector emitter voltage, Vce - (V)
Pulse width, tp - (s)
Fig.15 Forward bias safe operating area
Fig.16 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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